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The Broadcom Limited 1N5712 is a passivated Schottky barrier diode designed for general-purpose applications. It utilizes a patented guard ring structure to achieve high breakdown voltage within a low-cost glass package. The device operates within a junction temperature range of -65°C to +200°C and supports a DC power dissipation of 250 mW at 25°C case temperature. Key electrical specifications include a minimum breakdown voltage of 20 V, a maximum forward voltage of 550 mV at 35 mA, and a maximum reverse leakage current of 150 nA at 16 V.
Verify the specific ordering suffix when purchasing, as it determines the container type and quantity. Options include tape and reel configurations with 2500 or 5000 devices per reel, or bulk packaging containing 100 units in an antistatic bag. Confirm that the component meets RoHS requirements if applicable to your manufacturing standards before finalizing orders.
Select this component for designs requiring fast switching speeds and low forward voltage drops. The 20 V breakdown rating distinguishes it from higher voltage variants like the 1N5711. Ensure the circuit layout accommodates the Outline 15 package dimensions and restricts lead bending to maintain mechanical integrity during assembly processes.
This diode belongs to the 1N57xx series manufactured by Broadcom Limited. It shares the same physical package and core technology as the 5082-2810 variant but differs in its specific electrical ratings. The series is widely used in RF and microwave circuits where rapid response times are critical.
The 5082-2810 is a direct equivalent part number with identical electrical characteristics. Other series members such as the 1N5711 offer similar functionality but feature a higher 70 V breakdown voltage, which may not be suitable for lower voltage applications.