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The Microchip Technology 1N5712UBCA/TR is a Schottky barrier diode in a ceramic surface mount package, qualified per MIL-PRF-19500/444. It features a maximum working peak reverse voltage of 16 V and an average rectified output current of 75 mA. The device exhibits a minimum breakdown voltage of 20 V at 10 µA, with a maximum forward voltage of 1.0 V at 35 mA. Maximum reverse leakage current is 150 nA at 16 V, and capacitance is 2.0 pF at 0 V and 1 MHz.
Verify the specific ordering suffix against official documentation to confirm polarity configuration and qualification level. Confirm RoHS compliance status as design specifications may vary by production batch. Ensure the tape and reel option aligns with standard EIA-418D requirements if applicable.
Select this component for designs requiring a ceramic surface mount Schottky diode with military qualifications. Consider the 75 mA average rectified output current and 16 V working peak reverse voltage limits. Evaluate thermal resistance and derating curves for junction-to-solder pad performance under operating conditions.
This part belongs to the 1N5711UB and 1N5712UB series of Schottky barrier diodes. It serves as the surface mount counterpart to axial-leaded versions like the 1N5712-1. The series offers various polarities including common cathode, common anode, and doubler configurations within the same ceramic package family.
The 1N5712-1 is the axial-leaded equivalent. Surface mount alternatives include the 1N5712UR-1 in the DO-213AA package. Verify compatibility with JAN, JANTX, or JANTXV qualification levels when substituting.