1N5712UR-1/TR

1N5712UR-1/TR

$9.05
  • Description:DIODE SCHOTTKY 16V 75MA DO213AA
  • Series:-
  • Mfr:Microchip Technology
  • Package:Tape & Reel (TR)

SKU:c91d10b74f9e Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE SCHOTTKY 16V 75MA DO213AA
  • Series:-
  • Mfr:Microchip Technology
  • Package:Tape & Reel (TR)
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):16 V
  • Current - Average Rectified (Io):75mA
  • Voltage - Forward (Vf) (Max) @ If:1 V @ 35 mA
  • Speed:Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:150 nA @ 16 V
  • Capacitance @ Vr, F:2pF @ 0V, 1MHz
  • Mounting Type:Surface Mount
  • Package / Case:DO-213AA
  • Supplier Device Package:DO-213AA
  • Operating Temperature - Junction:-65°C ~ 150°C

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1N5712UR-1/TR

Overview

The Microchip Technology 1N5712UR-1/TR is a small-signal Schottky barrier diode designed for high-frequency and low-loss applications. It features a silicon construction housed in the DO-213AA (MiniMELF) surface-mount package. The device supports a maximum repetitive reverse voltage of 16 V and an average forward current of 35 mA. Key electrical characteristics include a maximum forward voltage of 1 V at 35 mA and a reverse leakage current of 150 nA at 16 V. It operates within a junction temperature range of -65°C to +150°C.

Feature Summary

  • Utilizes Schottky barrier technology to achieve low forward voltage drop and minimal power loss.
  • Features fast switching capabilities suitable for high-frequency signal processing.
  • Constructed with silicon material for stable performance across wide temperature ranges.

Applications

  • High-frequency rectification circuits
  • Power management systems requiring low loss
  • Signal detection and mixing applications

Procurement Notes

Verify the specific suffix configuration against official datasheets to ensure compatibility with required packaging and qualification levels. Confirm that the MiniMELF footprint matches the target PCB design. Check for any recent product change notifications regarding assembly sites or material compliance updates before finalizing procurement plans.

Selection Notes

Select this component when a surface-mount Schottky diode with a 16 V rating and 35 mA current capacity is required. Ensure the design accommodates the MiniMELF package dimensions. Consider the thermal operating limits and reverse leakage specifications relative to the circuit environment to guarantee reliable operation under expected load conditions.

Part Context

This part belongs to the 1N571x series of small-signal Schottky diodes manufactured by Microchip Technology. The series includes various package options such as axial leaded and surface-mount variants. The UR-1 designation specifically indicates the MELF-style surface-mount form factor, distinguishing it from through-hole equivalents like the standard 1N5712.

Replacement Considerations

Consult official substitution guides for compatible alternatives. Verify pinout and electrical parameters match exactly before replacing.

1N5712UR-1/TR1N5712UR-1/TR
$9.05
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