SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Microchip Technology 1N5712UR-1/TR is a small-signal Schottky barrier diode designed for high-frequency and low-loss applications. It features a silicon construction housed in the DO-213AA (MiniMELF) surface-mount package. The device supports a maximum repetitive reverse voltage of 16 V and an average forward current of 35 mA. Key electrical characteristics include a maximum forward voltage of 1 V at 35 mA and a reverse leakage current of 150 nA at 16 V. It operates within a junction temperature range of -65°C to +150°C.
Verify the specific suffix configuration against official datasheets to ensure compatibility with required packaging and qualification levels. Confirm that the MiniMELF footprint matches the target PCB design. Check for any recent product change notifications regarding assembly sites or material compliance updates before finalizing procurement plans.
Select this component when a surface-mount Schottky diode with a 16 V rating and 35 mA current capacity is required. Ensure the design accommodates the MiniMELF package dimensions. Consider the thermal operating limits and reverse leakage specifications relative to the circuit environment to guarantee reliable operation under expected load conditions.
This part belongs to the 1N571x series of small-signal Schottky diodes manufactured by Microchip Technology. The series includes various package options such as axial leaded and surface-mount variants. The UR-1 designation specifically indicates the MELF-style surface-mount form factor, distinguishing it from through-hole equivalents like the standard 1N5712.
Consult official substitution guides for compatible alternatives. Verify pinout and electrical parameters match exactly before replacing.