1N5712UR-1

1N5712UR-1

$8.91
  • Description:DIODE SCHOTTKY 16V 75MA DO213AA
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk

SKU:da42d0c059a3 Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE SCHOTTKY 16V 75MA DO213AA
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):16 V
  • Current - Average Rectified (Io):75mA
  • Voltage - Forward (Vf) (Max) @ If:1 V @ 35 mA
  • Speed:Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:150 nA @ 16 V
  • Capacitance @ Vr, F:2pF @ 0V, 1MHz
  • Mounting Type:Surface Mount
  • Package / Case:DO-213AA
  • Supplier Device Package:DO-213AA
  • Operating Temperature - Junction:-65°C ~ 150°C

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1N5712UR-1

Overview

The Microchip Technology 1N5712UR-1 is a small-signal Schottky barrier diode designed for surface-mount applications. It features a unidirectional configuration housed in the DO-213AA (MiniMELF) package. Key electrical parameters include a maximum repetitive reverse voltage of 16 V and an average forward current rating of 35 mA. The device exhibits a typical forward voltage drop of 1 V at 35 mA and a low reverse leakage current of 150 nA at 16 V. Operating capabilities extend from -65°C to +150°C junction temperature, ensuring reliability in demanding environments.

Feature Summary

  • Utilizes silicon Schottky technology for fast switching performance
  • Encased in a compact MiniMELF surface-mount package
  • Designed for high-reliability applications with wide thermal operating range

Applications

  • High-frequency signal detection circuits
  • Power supply rectification in space-constrained designs
  • Clamping and protection in sensitive electronic systems

Procurement Notes

Verify the specific ordering suffix and qualification level when sourcing this component. Confirm that the selected variant matches the required package type and electrical ratings for your design. Ensure compliance with project specifications regarding material composition and manufacturing standards before finalizing procurement decisions.

Selection Notes

Select this component for designs requiring a robust surface-mount Schottky diode with low forward voltage characteristics. Consider the MiniMELF footprint constraints and the 16 V reverse voltage limit during circuit planning. Evaluate the thermal management requirements against the specified junction temperature range to ensure long-term operational stability.

Part Context

This part belongs to the broader family of Microchip Schottky barrier diodes, which are engineered for efficiency and speed. The 1N5712UR-1 specifically serves as the surface-mount equivalent to traditional axial-leaded counterparts, facilitating automated assembly processes while maintaining the electrical performance expected in modern miniature electronic devices.

Replacement Considerations

Consult official substitution lists for verified equivalents. Cross-reference pinouts and electrical limits carefully when considering alternative manufacturers or packages to ensure functional compatibility without compromising circuit integrity.

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