SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Microchip Technology 1N5802US/TR is a single fast recovery rectifier designed for surface mount applications. It features a maximum repetitive peak reverse voltage of 50 V and an average forward rectified current of 1 A, with a surge current rating of 35 A. The device exhibits a typical forward voltage drop of 975 mV at rated current and a low reverse leakage current of 1 µA. Its fast recovery time is specified at 25 ns, supporting high-speed switching operations. The component operates within a junction temperature range of -65°C to +175°C and is housed in the D-5A (SQ-MELF) package.
Verify the specific suffix configuration against official datasheets to ensure compatibility with required radiation hardening or environmental standards. Confirm that the SQ-MELF package dimensions align with the target PCB footprint. Check for RoHS compliance status as indicated by manufacturer documentation, noting potential variations between standard and military-grade variants.
Select this component when a compact surface-mount solution is required for fast recovery applications. Ensure the circuit design accommodates the 50 V reverse voltage limit and 1 A continuous current rating. Consider the thermal management requirements given the wide operating temperature range and the specific thermal resistance characteristics of the SQ-MELF package.
This part belongs to the 1N5802 series of fast recovery rectifiers manufactured by Microchip Technology. It serves as a surface-mount alternative to through-hole equivalents, offering similar electrical characteristics in a smaller form factor. The series is widely used in industrial and commercial power electronics where space constraints and switching speed are critical design parameters.
Direct substitutes include JANTX1N5802US/TR and JANS1N5802URS/TR from the same manufacturer family. Verify pinout compatibility and package tolerance before substitution.