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The Microchip Technology 1N5802US is a silicon ultrafast recovery rectifier diode designed for high-reliability applications. It features a maximum average forward rectified current of 1A and a peak repetitive reverse voltage rating of 50V. The device exhibits a typical reverse recovery time of 25ns and a maximum non-repetitive peak forward surge current capability of 35A. Operating within a junction temperature range of -65°C to 175°C, it utilizes a surface mount D-5A (SQ-MELF) package with voidless hermetically sealed glass construction.
Verify the specific ordering suffix against official Microchip documentation to confirm package type and qualification level. Ensure the component meets required military specifications for your application. Check for recent Product Change Notifications regarding assembly sites or labeling updates before finalizing procurement decisions.
Select this component when ultrafast switching speeds are critical alongside high reliability requirements. The 50V reverse voltage rating suits low-voltage DC-DC converters. Consider the D-5A MELF package for compact surface-mount designs requiring hermetic sealing capabilities superior to standard plastic packages.
This part belongs to the 1N5802 series of ultrafast recovery rectifiers manufactured by Microchip Technology. The series includes variants with different voltage ratings such as 1N5804US and 1N5806US. These devices share similar construction technologies and are intended for applications where failure is not an option, leveraging established silicon rectifier expertise.
Direct replacements include JANTX1N5802URS/TR and JANTXV1N5802US. Verify that substitute parts maintain identical voltage, current, and recovery time specifications. Confirm package compatibility and qualification levels match the original design requirements.