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The Microchip Technology 1N5803/TR is a single rectifier diode designed for general-purpose switching applications. It features a maximum repetitive peak reverse voltage of 75 V and an average forward current rating of 2.5 A. The device exhibits a typical forward voltage drop of 875 mV at rated current and a maximum reverse leakage current of 1 µA at 75 V. With a fast recovery time of 25 ns, it supports efficient power conversion. The component operates within a junction temperature range of -65°C to +175°C and is supplied in a Case A axial through-hole package on tape and reel.
Verify the specific ordering suffix to confirm the packaging format, as the /TR designation indicates tape and reel supply. Ensure compatibility with existing PCB footprints for the Case A axial leaded configuration. Cross-reference the manufacturer part number against official Microchip databases to validate authenticity and current production status before finalizing procurement orders.
Select this component when a standard silicon rectifier with moderate reverse voltage blocking capability is required. The 75 V rating suits low-voltage DC systems. Consider the 2.5 A current capacity for moderate power loads. Verify that the axial through-hole mounting style aligns with the mechanical design constraints of the target assembly.
This part belongs to the 1N58xx series of Schottky barrier rectifiers manufactured by Microchip Technology. The series provides low forward voltage drops and high efficiency compared to standard PN junction diodes. The 1N5803 variant specifically targets applications requiring 75 V reverse voltage tolerance. The /TR suffix denotes bulk tape and reel packaging suitable for automated surface mount or through-hole insertion processes.
Direct substitutes include the 1N5802 for lower voltage ratings or the 1N5804 for higher voltage requirements within the same series. Equivalent generic parts must match the 75 V reverse voltage, 2.5 A forward current, and axial package dimensions.