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The Microchip Technology 1N5804US is a single ultrafast recovery rectifier diode designed for high-reliability applications. It features a 100 V repetitive peak reverse voltage and a 2.5 A average forward current rating. The device exhibits a maximum forward voltage of 975 mV at the rated current and a rapid reverse recovery time of 25 ns. With a maximum non-repetitive peak forward surge current of 35 A, it supports robust transient handling. The component operates within a junction temperature range of -65 °C to +175 °C and utilizes a hermetically sealed surface mount package.
Verify that the specific part number suffix matches the required package configuration and qualification level. Confirm compliance with project-specific material restrictions and environmental directives. Ensure the supplier provides valid traceability documentation for military-grade components. Check for recent product change notifications regarding assembly sites or labeling updates before finalizing procurement orders.
Select this component when ultrafast recovery performance is critical in space-constrained designs requiring hermetic sealing. Compare against standard fast recovery diodes if lower cost is prioritized over extreme reliability. Evaluate thermal management requirements given the wide operating temperature range. Consider alternative voltage ratings within the series if circuit constraints differ from the 100 V specification.
This device belongs to the 1N580xUS series of ultrafast recovery rectifiers manufactured by Microchip Technology. The series includes variants with different reverse voltage ratings ranging from 50 V to 150 V. These components share identical physical packages and recovery characteristics, differing primarily in their blocking voltage capabilities. The series is widely used in aerospace and defense sectors where failure tolerance is minimal.
Equivalent parts include JANTX1N5804US and JANS1N5804. Verify package compatibility and qualification levels when substituting.