SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Microchip Technology 1N5806E3 is a silicon ultrafast rectifier designed for high-reliability applications. It features a maximum average forward rectified current of 1.0 A and a repetitive peak reverse voltage of 150 V. The device exhibits a low leakage current of 1 µA at its rated voltage and maintains a maximum forward voltage drop of 1.2 V at full load. Operating temperatures range from -65 °C to +175 °C junction temperature, ensuring stability in extreme environments.
Verify the specific suffix against official Microchip documentation to confirm exact electrical tolerances and radiation qualification levels. Ensure the ordering part number matches the required hermetic sealing and package type specifications for your target application environment before finalizing procurement.
Select this component when high-speed switching and radiation hardness are critical requirements. The 150 V rating and 1 A current capacity define the operational limits. Consider the LCC-2A package constraints for PCB layout and thermal management strategies compared to standard through-hole alternatives.
This component belongs to the 1N5806 family of ultrafast rectifiers manufactured by Microchip Technology. It is specifically engineered for space-grade and military applications where reliability under cosmic radiation and extreme temperatures is mandatory. The E3 suffix indicates lead-free compliance within the hermetic package structure.
Public confirmed substitute part numbers: JAN1N5806, 1N5806U.