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The Microchip Technology 1N5806USE3 is a fast recovery rectifier diode designed for surface mount applications. It features a maximum average forward current of 2.5 A and a peak inverse voltage rating of 150 V. The device exhibits a reverse recovery time of 25 ns, enabling efficient high-frequency operation. It operates within a junction temperature range of -65°C to +175°C and includes a low leakage current specification of 1 µA at rated voltage.
Verify the specific manufacturer suffix and package type when ordering, as variations exist between axial through-hole and surface mount versions. Confirm radiation hardness requirements if deploying in space or high-radiation environments. Ensure compatibility with the LCC-2A footprint for surface mount implementations. Check for RoHS compliance status depending on the specific production batch and regional regulations.
Select this component for designs requiring ultrafast recovery characteristics in a compact surface mount form factor. The wide operating temperature range supports demanding industrial and aerospace conditions. Consider the low leakage current and high thermal stability for precision rectification tasks. Evaluate the package weight and thermal resistance benefits over traditional axial packages for space-constrained layouts.
This part belongs to the 1N5806 series of ultrafast rectifiers manufactured by Microchip Technology. It is characterized by its hermetic surface mount packaging and suitability for rad-hard applications. The device is ESCC qualified, making it eligible for use in space programs. It serves as a robust alternative to standard rectifiers in high-speed switching applications.
Direct substitutes include other 1N5806 variants such as JAN1N5806 or 1N5806USe3/TR, provided the package style matches the design requirements. Verify that replacement parts maintain the same 150 V PIV and 2.5 A current ratings. Ensure the substitute also meets the 25 ns reverse recovery time specification for equivalent circuit performance.