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The Microchip Technology 1N5807/TR is a military-qualified ultrafast recovery rectifier diode designed for high-reliability applications. It features a 50 V maximum DC reverse voltage and a 6 A average rectified forward current rating. The device utilizes silicon technology with a standard recovery time of 30 ns and a low reverse leakage current of 5 µA at 50 V. Packaged in an axial B-package configuration, it supports through-hole mounting and operates within a temperature range of -65°C to +175°C.
Verify the specific revision level and lot traceability documentation upon receipt to ensure compliance with MIL-PRF-19500/477 requirements. Confirm that the axial B-package form factor matches the intended PCB layout constraints. Validate the absence of physical damage to the glass seal before integration into sensitive circuits.
Select this component when military-grade reliability and ultrafast recovery speeds are mandatory. The 6 A current rating distinguishes it from lower-capacity variants in the series. Ensure the system design accommodates the specified 30 ns reverse recovery time and the wide operating temperature range for optimal performance.
This part belongs to the 1N58xx series of ultrafast recovery rectifiers manufactured by Microchip Technology. The /TR suffix indicates tape-and-reel packaging for automated assembly. It shares the same electrical specifications as the non-suffix 1N5807 but differs in packaging format and potentially in specific military screening levels defined by the ordering code.
Direct substitutes include JAN1N5807/TR and JANTX1N5807/TR, which maintain identical electrical parameters and military qualification standards. Verify package compatibility and specific screening levels when cross-referencing with other manufacturers' equivalents.