SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The 1N5807US/TR is a fast recovery rectifier diode manufactured by Microchip Technology. It features a single configuration with a maximum DC reverse voltage of 50 V and an average forward current rating of 6 A. The device exhibits a forward voltage of 875 mV at 4 A and a reverse leakage current of 5 µA at 50 V. Key electrical parameters include a maximum non-repetitive peak forward surge current of 125 A, a reverse recovery time of 30 ns, and a junction capacitance of 60 pF at 10 V and 1 MHz. It operates within a junction temperature range of -65 °C to +175 °C.
Verify the specific suffix TR indicates tape and reel packaging upon order confirmation. Confirm RoHS status as non-compliant if required by project specifications. Ensure the supplier provides valid traceability documentation consistent with military qualification requirements. Validate that the component matches the SQ-MELF B package dimensions for PCB integration.
Select this component when a hermetically sealed, military-qualified rectifier is required for high-reliability environments. The 50 V reverse voltage and 6 A current ratings define its operational limits. Consider the 30 ns reverse recovery time for high-frequency applications. Verify compatibility with surface-mount assembly processes due to the SQ-MELF package type.
This part belongs to the 1N580x series of ultrafast recovery glass rectifiers produced by Microchip Technology. These devices are designed for applications where failure cannot be tolerated. The series includes various voltage ratings from 50 V to 150 V, all sharing similar hermetic sealing and fast recovery technologies.
JANTX1N5807US/TR