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The Microchip Technology 1N5809/TR is a single fast recovery rectifier diode designed for through-hole mounting in B-Package-2 configurations. It features a maximum repetitive peak reverse voltage of 100 V and an average forward current rating of 6 A. The device exhibits a typical forward voltage drop of 875 mV at rated current, with a maximum surge current capacity of 125 A. Reverse leakage current is specified at 5 uA, and the junction temperature range spans from -65 °C to +175 °C. The component utilizes bulk packaging and is classified under the Fast Recovery Rectifiers category.
Verify the specific suffix designation against official Microchip documentation to confirm package type and testing requirements. Ensure that the procurement channel provides valid traceability records consistent with military or industrial standards. Confirm compliance with relevant environmental directives prior to integration into final assemblies.
Select this component when a through-hole fast recovery rectifier with a 100 V reverse voltage rating is required. Consider the 6 A average forward current capability and the wide thermal operating range for demanding environments. Evaluate the B-Package-2 footprint compatibility during the PCB layout phase to ensure proper mechanical fit.
This part belongs to the 1N5809 series of ultrafast recovery glass rectifiers manufactured by Microchip Technology. The series is engineered for applications where failure is not an option, offering industry-standard ratings within a hermetically sealed glass envelope. It serves as a specialized alternative to standard commercial-grade rectifiers in critical infrastructure.
Consult official substitution guides for equivalent parts such as JANTX1N5809 or 1N5809US if form-factor changes are permissible. Verify electrical parameter alignment before swapping components to maintain circuit integrity.