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The Microchip Technology 1N5809US/TR is a single fast recovery rectifier designed for surface-mount applications. It features a maximum repetitive reverse voltage of 100 V and an average forward current rating of 6 A. The device exhibits a low forward voltage drop of 875 mV at rated current and a rapid reverse recovery time of 30 ns. With a peak non-repetitive surge current capability of 125 A, it operates reliably within a junction temperature range from -65 °C to +175 °C. Packaged in the SQ-MELF-2 form factor, this component provides robust performance for high-speed switching circuits.
Verify the specific suffix US/TR against official Microchip documentation to confirm the SQ-MELF-2 package and tape-and-reel configuration. Ensure compatibility with RoHS directives if required by your design specifications. Cross-reference the manufacturer part number with authorized distributors to validate authenticity and traceability before procurement.
Select this component when a surface-mount fast recovery rectifier is required with a 100 V blocking voltage and 6 A continuous current capacity. The SQ-MELF-2 package suits space-constrained PCB layouts. Consider the 30 ns recovery time for applications demanding minimal switching losses. Verify that the operating environment stays within the specified -65 °C to +175 °C junction temperature range.
This part belongs to the 1N58xx series of fast recovery rectifiers manufactured by Microchip Technology. The series offers various voltage ratings while maintaining consistent current handling and recovery speed profiles. The US/TR designation indicates a specific surface-mount variant optimized for automated assembly processes in modern electronic manufacturing.
Consult Microchip datasheets for direct equivalents within the 1N58xx series, such as the 1N5808US/TR or 1N5810US/TR, ensuring voltage and current ratings match the application requirements.