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The Microchip Technology 1N5811 is a single silicon rectifier diode designed for high-reliability applications. It features a maximum repetitive peak reverse voltage of 150 V and an average forward current rating of 6 A. The device exhibits a typical forward voltage of 875 mV at rated current and supports a non-repetitive peak forward surge current of 125 A. Reverse leakage current is specified at 5 uA, with a fast recovery time of 30 ns. Operating temperatures range from -65 °C to +175 °C.
Verify the specific manufacturer designation, as Gulf Semiconductor also produces a component with this part number. Confirm package type (MELF or DO-41) and qualification level (commercial vs. military) against project requirements. Ensure datasheet parameters match design constraints before procurement.
Select this component for designs requiring ultrafast recovery times and high thermal stability. The 150 V reverse voltage rating suits low-voltage AC/DC conversion. Verify that the 6 A current rating meets load demands without excessive derating. Consider radiation hardness if operating in space environments.
This component belongs to the 1N58xx series of ultrafast recovery glass rectifiers. It shares family traits such as hermetic sealing and planar technology but differs in specific voltage and current ratings compared to siblings like the 1N5807 or 1N5809. The 1N5811 specifically targets the 150 V reverse voltage segment within this lineup.
JAN1N5811/TR and JANS1N5811/TR are confirmed qualified substitutes offering similar electrical specifications with additional military or aerospace qualification levels.