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The Semtech Corporation 1N5811C.TR is a rectifier diode designed for general-purpose applications. It features a maximum repetitive peak reverse voltage of 150 V and an average forward rectified current rating of up to 6 A. The device exhibits a fast recovery characteristic with a typical reverse recovery time of 30 ns. It operates within a junction temperature range of -65°C to +175°C and is supplied in a tape and reel packaging format.
Verify the specific suffix 'C' against the official Semtech datasheet to confirm if it denotes a specific binning, tolerance, or package variation distinct from the standard 1N5811. Ensure the manufacturer designation aligns with current Microchip ownership structures if cross-referencing legacy data. Confirm RoHS compliance status for the specific lot code prior to integration.
Select this component when a fast recovery rectifier with a 150 V blocking capability is required. The 30 ns reverse recovery time makes it suitable for frequencies exceeding standard silicon rectifier limits. Evaluate thermal management requirements given the 175°C maximum junction temperature rating and ensure the circuit design accommodates the specified forward voltage drop at the target load current.
The 1N5811 series represents a line of ultrafast recovery rectifiers originally defined by military specifications such as MIL-PRF-19500/477. These devices are characterized by void-less glass passivation and metallurgical bonding. Semtech offers variants within this family, maintaining the core electrical profile while adapting to commercial or specialized industrial supply chain requirements through specific ordering codes.
Direct substitutes include other manufacturers' 1N5811 equivalents such as those from Microsemi, Sensitron, or Gulf Semiconductor. Verify that replacement parts match the 150 V reverse voltage, 6 A current rating, and 30 ns recovery time. Surface mount MELF packages may serve as pin-compatible alternatives if board space is constrained.