SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Microchip Technology 1N5811E3/TR is a fast recovery rectifier diode designed for high-reliability applications. It features a maximum repetitive peak reverse voltage of 150 V and an average forward rectified current rating of 6 A. The device exhibits a low forward voltage drop of 875 mV at 4 A and a rapid reverse recovery time of 30 ns. With a maximum non-repetitive peak forward surge current of 125 A, it supports robust transient handling. The component operates within a junction temperature range of -65°C to +175°C and utilizes a B-Axial through-hole package.
Verify the specific suffix E3 indicates lead-free compliance when sourcing. Confirm the TR designation corresponds to reel packaging requirements for automated assembly. Cross-reference the manufacturer part number against official Microchip documentation to ensure authenticity and traceability. Check for any recent Product Change Notifications regarding assembly site or labeling updates.
Select this component for applications requiring fast switching speeds and high thermal stability. The 150 V reverse voltage rating suits medium-voltage rectification tasks. Ensure the circuit design accommodates the 6 A continuous current capability and the 125 A surge rating. Verify that the through-hole B-Axial package fits the available board space and mounting constraints.
This device belongs to the 1N58xx series of ultrafast recovery glass rectifiers. It shares similar electrical specifications with variants like the JAN1N5811 but differs in qualification standards. The series is characterized by its void-less glass construction and internal metallurgical bonds, distinguishing it from standard plastic-packaged rectifiers.
Direct substitutes include the JAN1N5811/TR for military-grade equivalents. Standard commercial alternatives may include other 150 V, 6 A fast recovery diodes from the same family, such as the 1N5811 without the E3/TR suffix, provided package and environmental ratings match.