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Product Detailed Parameters
- Description：DIODE STANDARD 150V 3A B SQMELF
- Series：-
- Mfr：Microchip Technology
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：150 V
- Current - Average Rectified (Io)：3A
- Voltage - Forward (Vf) (Max) @ If：875 mV @ 4 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：30 ns
- Current - Reverse Leakage @ Vr：5 µA @ 150 V
- Capacitance @ Vr, F：60pF @ 10V, 1MHz
- Mounting Type：Surface Mount
- Package / Case：SQ-MELF, B
- Supplier Device Package：B, SQ-MELF
- Operating Temperature - Junction：-65°C ~ 175°C
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Overview
The Microchip Technology 1N5811URS/TR is a military-qualified ultrafast recovery glass rectifier. It features a void-less hermetically sealed MELF package with one square and one round end cap. The device supports a working peak reverse voltage of 150 V and an average rectified output current of 6.0 A at 75°C case temperature, or 3.0 A at 55°C ambient temperature. Key electrical parameters include a maximum forward voltage of 0.875 V at 4 A, a reverse leakage current of 5 µA at 150 V, and a reverse recovery time of 30 ns. It operates within a junction temperature range of -65°C to +175°C.
Feature Summary
- Hermetically sealed void-less glass construction with internal Category 1 metallurgical bonds for high reliability.
- Ultrafast recovery characteristics suitable for high-frequency switching applications.
- Qualified per MIL-PRF-19500/477 for JAN, JANTX, JANTXV, and JANS levels.
- Inherently radiation hard design.
Applications
- Military and space high-reliability applications
- Switching power supplies requiring fast switching and low forward loss
- High forward surge current capability circuits
Procurement Notes
Verify the specific qualification level (JAN, JANTX, JANTXV, or JANS) required for your application, as the base part number covers multiple grades. Confirm RoHS compliance status, noting that compliant versions are available only on commercial grade parts. Ensure the URS package configuration matches your PCB footprint requirements before ordering.
Selection Notes
Select this component when a hermetically sealed, ultrafast recovery diode is needed for harsh environments. The 1N5811 variant provides 150 V reverse voltage support. Consider the thermal derating curves if operating near the maximum junction temperature limits. Verify lead length specifications for through-hole mounting if applicable.
Part Context
This device belongs to the 1N5807US, 1N5809US, 1N5811US, and URS series of ultrafast recovery glass rectifiers. It serves as the surface mount equivalent to the axial-leaded 1N5811 series while maintaining military-grade reliability standards. The URS designation specifically indicates the mixed end-cap MELF package style.
Replacement Considerations
Direct replacements must match the 150 V rating, 6 A current capacity, and 30 ns reverse recovery time. Verify that substitute components offer comparable hermetic sealing and radiation hardness if used in qualified systems.
FAQ
What does the 'URS' suffix indicate in the part number?
The 'URS' suffix denotes a specific surface mount MELF package configuration where one end cap is square and the other is round.
Is the 1N5811URS/TR inherently radiation hard?
Yes, the datasheet states the device is inherently radiation hard as described in Microsemi MicroNote 050.
