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The Microchip Technology 1N5811US/TR is a surface-mount ultrafast recovery rectifier diode housed in the SQ-2 package. It features a maximum repetitive peak reverse voltage of 150 V and an average forward rectified current rating of 6 A. The device exhibits a typical forward voltage drop of 875 mV at 4 A and a maximum reverse leakage current of 5 µA at 150 V. Its ultrafast recovery characteristics include a reverse recovery time of 30 ns. The component operates within a junction temperature range of -65°C to +175°C.
Verify that the ordering suffix /TR indicates tape and reel packaging, as this affects handling procedures. Confirm the specific manufacturer lot codes and quality certifications required for your assembly process. Ensure the requested part number matches the exact electrical specifications and package dimensions defined in the official datasheet to avoid integration errors.
Select this component when designing circuits requiring fast switching speeds and low conduction losses in a compact surface mount form factor. The 150 V rating suits applications with moderate voltage spikes. Consider the thermal management requirements associated with the 6 A current rating and the specific thermal resistance of the SQ-2 package during layout.
This part belongs to the 1N58xx series of ultrafast recovery rectifiers manufactured by Microchip Technology. The series includes various voltage ratings and package options, such as axial leaded and surface mount configurations. The US designation typically denotes a hermetically sealed surface mount variant, while the TR suffix specifies the reel packaging format for automated assembly.
Direct substitutes include JAN1N5811US and JAN1N5811/TR from Microchip, which share identical electrical characteristics but may differ in military qualification status or packaging type. Verify pinout compatibility and thermal performance before substituting.