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The Microchip Technology 1N5811USE3/TR is a single fast recovery rectifier diode designed for surface-mount applications. It features a maximum repetitive peak reverse voltage of 150 V and an average forward rectified current of 6 A. The device exhibits a low forward voltage drop of 875 mV at 4 A and a rapid reverse recovery time of 30 ns. With a maximum non-repetitive peak forward surge current of 125 A and a leakage current of 5 µA at 150 V, it operates within a junction temperature range of -65°C to +175°C.
Verify the specific suffix 'USE3' confirms lead-free status and tin-plated terminals as per manufacturer specifications. Confirm the tape and reel packaging format matches automated assembly requirements. Ensure the ordering quantity aligns with the factory pack size of 123 units to avoid partial reel handling issues during procurement.
Select this component when surface-mount technology is required for high-speed rectification tasks. The 150 V rating suits low-voltage DC systems, while the 6 A current capacity supports moderate power loads. Verify that the B-Package-2 footprint fits the PCB layout constraints before finalizing the design integration.
This part belongs to the 1N581x series of fast recovery rectifiers manufactured by Microchip Technology. It serves as the surface-mount, lead-free variant of the through-hole 1N5811. The 'USE3' designation indicates environmental compliance and specific terminal finish, distinguishing it from standard bulk or non-compliant versions within the same electrical family.
Direct functional equivalents include the 1N5811US for leaded SMT versions. For lead-free through-hole replacements, consider the 1N5811E3. Verify pinout compatibility and thermal dissipation characteristics when substituting with other manufacturers' fast recovery diodes.