1N5813R

1N5813R

$62.58
  • Description:DIODE STD REV 75V 20A DO203AA
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk

SKU:a04f5eba2076 Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE STD REV 75V 20A DO203AA
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Technology:Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max):75 V
  • Current - Average Rectified (Io):20A
  • Voltage - Forward (Vf) (Max) @ If:950 mV @ 20 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):35 ns
  • Current - Reverse Leakage @ Vr:10 µA @ 75 V
  • Capacitance @ Vr, F:300pF @ 10V, 1MHz
  • Mounting Type:Stud Mount
  • Package / Case:DO-203AA, DO-4, Stud
  • Supplier Device Package:DO-203AA (DO-4)
  • Operating Temperature - Junction:-65°C ~ 175°C

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1N5813R

Overview

The 1N5813R is a military-qualified ultrafast recovery rectifier diode manufactured by Microchip Technology. It features a 75V repetitive reverse voltage rating and a 20A average forward current capability. The device utilizes silicon technology housed in a hermetically sealed DO-4 (DO-203AA) stud mount package. Designed for high-reliability applications, it exhibits a maximum non-repetitive peak forward surge current of 80A and operates within a temperature range of -65°C to +175°C.

Feature Summary

  • Military qualification ensures suitability for high-reliability environments where failure is not tolerated.
  • Ultrafast recovery characteristics provide rapid switching performance with minimal reverse recovery time.
  • Hermetically sealed metal package offers robust protection against environmental factors.

Applications

  • High-reliability power supply systems
  • Military-grade electronic circuits
  • Industrial rectification requiring fast recovery

Procurement Notes

Verify the manufacturer marking matches Microchip Technology or its authorized predecessor entities such as Microsemi. Confirm the package type is DO-4 with screw mounting terminals. Ensure the part number suffix 'R' corresponds to the specific military or hermetic variant required for your design specifications.

Selection Notes

Select this component when military-grade reliability and ultrafast recovery are mandatory. The 75V rating suits low-voltage high-current applications. The stud mount package requires compatible thermal management solutions. Verify that the hermetic seal meets the environmental standards of the target deployment.

Part Context

This diode belongs to the 1N58xx series of ultrafast recovery rectifiers. The 'R' suffix typically denotes a specific packaging or qualification variant, often associated with hermetic sealing or military standards. It shares functional similarities with other members of the series but differs in voltage ratings and specific package configurations.

Replacement Considerations

Direct substitutes include other military-qualified 20A 75V ultrafast recovery diodes in DO-4 packages from qualified manufacturers. Ensure any replacement maintains the same reverse voltage, current rating, and recovery speed characteristics.

FAQ

What is the recovery time characteristic of the 1N5813R?

It is classified as an ultrafast recovery rectifier, with typical reverse recovery times around 35ns.

Is the 1N5813R suitable for harsh environments?

Yes, it is military qualified and housed in a hermetically sealed package, making it suitable for demanding conditions.

1N5813R1N5813R
$62.58
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