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The 1N5813R is a military-qualified ultrafast recovery rectifier diode manufactured by Microchip Technology. It features a 75V repetitive reverse voltage rating and a 20A average forward current capability. The device utilizes silicon technology housed in a hermetically sealed DO-4 (DO-203AA) stud mount package. Designed for high-reliability applications, it exhibits a maximum non-repetitive peak forward surge current of 80A and operates within a temperature range of -65°C to +175°C.
Verify the manufacturer marking matches Microchip Technology or its authorized predecessor entities such as Microsemi. Confirm the package type is DO-4 with screw mounting terminals. Ensure the part number suffix 'R' corresponds to the specific military or hermetic variant required for your design specifications.
Select this component when military-grade reliability and ultrafast recovery are mandatory. The 75V rating suits low-voltage high-current applications. The stud mount package requires compatible thermal management solutions. Verify that the hermetic seal meets the environmental standards of the target deployment.
This diode belongs to the 1N58xx series of ultrafast recovery rectifiers. The 'R' suffix typically denotes a specific packaging or qualification variant, often associated with hermetic sealing or military standards. It shares functional similarities with other members of the series but differs in voltage ratings and specific package configurations.
Direct substitutes include other military-qualified 20A 75V ultrafast recovery diodes in DO-4 packages from qualified manufacturers. Ensure any replacement maintains the same reverse voltage, current rating, and recovery speed characteristics.
It is classified as an ultrafast recovery rectifier, with typical reverse recovery times around 35ns.
Yes, it is military qualified and housed in a hermetically sealed package, making it suitable for demanding conditions.