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The Microchip Technology 1N5816R is a single-element silicon rectifier diode designed for stud mount applications. It features a maximum repetitive peak reverse voltage of 150 V and an average forward current rating of 20 A. The device exhibits a maximum forward voltage drop of 0.95 V at rated current and a maximum non-repetitive peak forward surge current of 400 A. Electrical characteristics include a maximum reverse leakage current of 10 µA and a maximum reverse recovery time of 35 ns. The component operates within a junction temperature range of -65°C to +175°C and utilizes the DO-203AA (DO-4) package.
Verify the specific manufacturer source, as Diodes Incorporated also produces this part number. Confirm RoHS compliance status, as Microchip versions may not meet standard regulations. Ensure the DO-4 stud mount package matches the mechanical design requirements before ordering.
Select this component when a 150 V blocking voltage and 20 A continuous current are required in a stud-mount configuration. The fast recovery characteristic distinguishes it from standard rectifiers, making it appropriate for higher frequency operations where lower reverse recovery losses are necessary.
This device belongs to the general category of fast recovery rectifiers manufactured by Microchip Technology. It shares the 1N581x series designation but is distinct from other variants like the 1N5815R or 1N5817 based on its specific voltage and recovery specifications.
Cross-reference with Diodes Incorporated 1N5816R for identical electrical parameters. Verify that any substitute maintains the DO-4 stud mount footprint and meets the 175°C thermal rating.