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The Central Semiconductor Corp 1N5817 TR TIN/LEAD is a silicon Schottky barrier rectifier designed for low voltage and high frequency applications. It features a 20 V maximum repetitive peak reverse voltage and a 1 A average forward current rating in the DO-41 axial package. The device exhibits a low forward voltage drop of 450 mV at 1 A and supports a 25 A peak forward surge current. Operating junction temperatures range from -65°C to +125°C, with a maximum reverse leakage current of 500 µA.
Verify that the specific ordering suffix corresponds to the tin/lead plating finish rather than lead-free alternatives. Confirm the tape and reel packaging format matches the required automated assembly equipment specifications. Ensure the component lot aligns with current RoHS compliance requirements if applicable to the final product design constraints.
Select this component when low forward voltage drop and high switching speed are critical for system efficiency. The DO-41 through-hole package is suitable for general-purpose circuit boards requiring robust mechanical mounting. Consider the 20 V reverse voltage rating to ensure adequate margin above the operating DC bus voltage.
This part belongs to the standard 1N58xx series of axial Schottky rectifiers. It shares the same electrical characteristics as other manufacturers' 1N5817 variants but utilizes Central Semiconductor's specific guard ring die technology. The tin/lead finish indicates it is not a lead-free compliant variant unless explicitly stated otherwise by the manufacturer.
Yes, the datasheet specifies avalanche capability for this device, allowing it to handle limited avalanche energy under controlled conditions.
The maximum thermal resistance from junction to ambient is specified as 80°C/W for the DO-41 package configuration.