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The Microchip Technology 1N5817/TR is a silicon Schottky barrier rectifier housed in the DO-41 axial through-hole package. It features a maximum repetitive peak reverse voltage of 20 V and an average forward rectified current rating of 1 A. The device exhibits a low forward voltage drop, typically 1 V at rated current, with a maximum reverse leakage current of 1 mA at 20 V. It supports a forward surge current of 50 A and operates within a junction temperature range of -65°C to 150°C.
Verify the specific suffix '/TR' against the official Microchip datasheet to confirm tape-and-reel packaging status, as standard 1N5817 units may be bulk packed. Confirm RoHS compliance and lead-free finish requirements directly from the manufacturer's ordering information. Ensure the component matches the DO-41 package dimensions and electrical specifications defined in the public datasheet before integration.
Select this component for applications requiring low forward voltage and fast switching speeds in low voltage environments. The 20 V reverse voltage rating limits suitability to low-voltage DC systems. Verify that the 1 A average current and 50 A surge current ratings exceed the circuit's operational peaks. Consider thermal management for the DO-41 package under continuous load conditions.
The 1N5817 is a legacy part number widely recognized in the electronics industry for general-purpose rectification. Microchip Technology produces variants of this device, maintaining compatibility with established designs. The component belongs to the family of axial leaded Schottky rectifiers, offering a balance between performance and ease of manual or automated through-hole assembly.
Publicly confirmed substitute part numbers are not available in the provided source material. Cross-reference with other manufacturers such as Taiwan Semiconductor or ON Semiconductor only if their datasheets explicitly list equivalent electrical parameters and pinout compatibility.