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The Microchip Technology 1N5817E3 is a silicon axial power Schottky rectifier designed for low voltage and high frequency applications. It features a maximum repetitive reverse voltage of 20 V and an average forward rectified current of 1 A. The device exhibits a low forward voltage drop of 1 V at the rated current, ensuring minimal conduction losses. It supports a forward surge current of 50 A and has a specified reverse leakage current of 1 mA. Packaged in the DO-41 (DO-204AL) through-hole format, it operates within a junction temperature range of -55°C to 150°C.
Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm RoHS compliance status via the specific ordering suffix. Request batch traceability documents to ensure material consistency. Validate package dimensions against the DO-41 standard before integration into PCB layouts.
Select this component for designs requiring low forward voltage and fast recovery characteristics. Ensure the circuit operating voltage remains below the 20 V reverse voltage limit. Verify thermal management capabilities to maintain junction temperatures within the specified range during continuous operation.
This part belongs to the 1N58xx series of axial power Schottky rectifiers manufactured by Microchip Technology. The series includes variants with different reverse voltage ratings, such as the 1N5818 and 1N5819. These components are widely used in general-purpose rectification tasks where efficiency and speed are critical design parameters.
Public confirmed substitute part numbers include 1N5818 from STMicroelectronics.