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The Microchip Technology 1N5817G/TR is a Schottky barrier rectifier designed for low voltage and high frequency applications. It features an average forward current of 1 A and a maximum repetitive peak reverse voltage of 20 V. The device utilizes a DO-41 axial lead package suitable for through-hole mounting. Key electrical characteristics include a maximum DC forward voltage of 1 V at 1 A, a maximum reverse current of 1 mA at 20 V, and a peak forward surge current rating of 50 A. The junction temperature range extends from -65 °C to +125 °C.
Verify the specific suffix 'G' against the manufacturer's official documentation to confirm its exact meaning regarding RoHS compliance or tape-and-reel packaging format. Ensure the component matches the required DO-41 axial lead package and that the 20 V reverse voltage rating aligns with the circuit design requirements before finalizing procurement.
Select this component for designs requiring low forward voltage drop and fast recovery characteristics in power conversion applications. The 1 A current rating and 20 V blocking voltage define the operational limits. Consider the thermal management capabilities provided by the DO-41 package for through-hole implementation in space-constrained environments.
This part belongs to the standard 1N58xx series of Schottky rectifiers manufactured by Microchip Technology. These devices are widely recognized for their reliability in general-purpose rectification tasks. The 1N5817 variant specifically targets applications where low forward voltage and high efficiency are critical parameters for system performance.
Compatible substitutes include the 1N5817 from other manufacturers such as Taiwan Semiconductor or MCC, provided they meet the identical 20 V, 1 A specifications and DO-41 package constraints. Verify pinout compatibility and thermal ratings when cross-referencing datasheets.