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The 1N5817W is a Schottky barrier rectifier manufactured by Shenzhen Slkormicro Semicon Co., Ltd. It features a maximum average forward rectified current of 1A and a repetitive peak reverse voltage of 20V. The device utilizes a DO-41 axial leaded package for through-hole mounting. Key electrical characteristics include a low forward voltage drop, typically around 450mV at 1A, and a low reverse leakage current of 500µA at 20V. It is designed for high-efficiency applications requiring fast switching speeds.
Verify the specific manufacturer designation when sourcing, as the 1N5817 part number is widely produced by multiple semiconductor vendors including Taiwan Semiconductor, Diodes Inc., and Micro Commercial Components. Confirm that the 'W' suffix corresponds to the intended packaging or compliance standard required for your assembly process. Ensure the component meets RoHS and REACH directives if applicable to your region.
Select this component for low-voltage, high-frequency rectification tasks where minimizing power loss is critical. The 20V rating suits small battery chargers and low-voltage inverters. Consider the DO-41 package size for through-hole PCB layouts. Evaluate thermal management requirements based on the expected forward current load and ambient operating temperature conditions.
This device belongs to the 1N581x series of Schottky rectifiers, which are standardized for general-purpose low-voltage rectification. The series includes variants with different reverse voltage ratings, such as the 1N5818 (30V) and 1N5819 (40V). These components are commonly used in consumer electronics and industrial control systems requiring reliable, efficient power conversion.
Direct substitutes include the 1N5817 from other manufacturers like Taiwan Semiconductor or Diodes Inc., provided they share the same DO-41 package and electrical specifications. Cross-reference datasheets to ensure compatibility regarding forward voltage, reverse leakage, and thermal resistance before implementation.