1N5818

Overview

The onsemi 1N5818 is a Schottky Barrier Rectifier featuring a large area metal-to-silicon power diode with chrome barrier metal and epitaxial construction. It provides a peak repetitive reverse voltage of 30 V and an average rectified forward current of 1.0 A. The device operates within a junction temperature range of -65°C to +125°C, with a maximum non-repetitive peak surge current of 25 A.

Feature Summary

• Majority carrier conduction eliminates minority carrier stored charge transients.
• Low instantaneous forward voltage drop reduces power loss.
• Suitable for high-frequency operation up to several megahertz.

Applications

• Rectifiers in low-voltage, high-frequency inverters
• Free wheeling diodes
• Polarity protection circuits

Procurement Notes

Verify the specific ordering suffix (e.g., G or RL) against the datasheet to confirm package type and shipping configuration. Ensure compliance with RoHS requirements if applicable. Confirm thermal resistance values match the intended mounting method before finalizing procurement specifications.

Selection Notes

Select this component when a 30 V blocking capability is required alongside a 1.0 A continuous current rating. Consider the thermal characteristics and lead length for heat dissipation. Compare forward voltage and reverse leakage parameters against circuit requirements to ensure efficiency targets are met.

Part Context

This part belongs to the 1N581x series of axial lead Schottky rectifiers manufactured by onsemi. It shares the same physical case outline and general electrical architecture as the 1N5817 and 1N5819, differentiated primarily by its specific reverse voltage rating.

Replacement Considerations

Cross-reference with other manufacturers' 1N5818 equivalents. Verify that substitute parts meet the 30 V reverse voltage and 1.0 A forward current ratings. Check for identical DO-41 mechanical dimensions and polarity band placement.