SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Diotec Semiconductor 1N5818 is a Schottky Barrier Rectifier Diode rated for an average forward current (IFAV) of 1 A and a peak reverse voltage (VRRM) of 30 V. It features a maximum forward voltage drop (VF) of less than 0.875 V at 3.0 A and a typical junction capacitance (Cj) of 80 pF at 4 V. The device supports a peak forward surge current (IFSM) of 40 A under 60 Hz half-sine-wave conditions. Operating temperatures range from -50°C to +150°C for the junction and -50°C to +175°C for storage.
Verify that the specific ordering suffix matches the required packaging format, such as bulk or tape and reel, as these affect handling procedures. Confirm RoHS compliance status and check for any recent Product Change Notifications (PCNs) regarding assembly sites or labeling updates before finalizing procurement orders.
Select this component when designing circuits requiring low forward voltage drop and fast recovery characteristics. Ensure the thermal management strategy accounts for the specified thermal resistance values. Verify that the operating ambient temperature allows for derating the 1 A current rating according to the manufacturer's performance curves.
This part belongs to the 1N5817 through 1N5819 series of axial power Schottky rectifiers. While sharing identical electrical ratings and physical dimensions, the series differentiates components primarily by their specific forward voltage thresholds. This variant sits between the lower voltage drop of the 1N5817 and the higher threshold of the 1N5819.
Cross-reference with other manufacturers' 1N5818 equivalents to ensure pinout compatibility and thermal performance alignment. Verify that substitute parts meet the same 94V-0 flammability rating and DO-41 package mechanical constraints.