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The STMicroelectronics 1N5818 is a silicon Schottky barrier rectifier designed for high-efficiency applications. It features a maximum average forward rectified current of 1 A and a maximum repetitive peak reverse voltage of 30 V. The device utilizes a DO-41 axial through-hole package with an isolated case connection. Key electrical characteristics include a low forward voltage drop of 500 mV at 1 A and a maximum reverse leakage current of 500 µA at 30 V. It operates within a junction temperature range up to 150°C and supports fast recovery speeds under 500 ns.
Verify the specific manufacturer lot and date code against project requirements before procurement. Confirm RoHS compliance status as it may vary by production batch. Ensure the DO-41 package dimensions match the PCB footprint exactly. Check for any recent PCN notifications regarding assembly site or material changes that could impact qualification.
Select this component when a low forward voltage drop and fast switching speed are critical for system efficiency. The 30 V reverse voltage rating limits its use to lower voltage DC-DC conversion stages. Consider the 1 A current limit for load requirements. The DO-41 package is suitable for through-hole mounting where space constraints allow.
This part belongs to the 1N581x series of Schottky rectifiers, which includes variants with different reverse voltage ratings such as the 1N5817 (20 V) and 1N5819 (40 V). All members share similar physical packaging and core Schottky technology but differ in their blocking voltage capabilities. This specific model targets applications requiring a balance between voltage handling and low loss.
Cross-reference with other manufacturers' 1N5818 equivalents to ensure pinout and thermal characteristics align. Verify that substitute parts meet the same 500 mV forward voltage and 500 µA leakage specifications. Confirm that the replacement package is compatible with existing assembly processes.