SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Vishay 1N5818-E3/73 is a Schottky barrier rectifier featuring a single silicon die in a DO-204AL (DO-41) axial leaded package. It provides a maximum average forward current of 1 A and a maximum repetitive peak reverse voltage of 30 V. The device exhibits a low forward voltage drop, typically 0.55 V at 1 A and 25 °C, with a maximum junction temperature rating of 150 °C.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm compliance status and packaging type. The -E3 designation indicates RoHS compliance and halogen-free terminations. Confirm that the required quantity matches the standard tape and reel or bulk packaging options provided by the supplier.
Select this component when a low forward voltage drop is critical for efficiency in moderate voltage applications up to 30 V reverse blocking. Ensure the operating environment remains within the specified -40 °C to 150 °C junction temperature range. Verify thermal management requirements against the 80 °C/W thermal resistance characteristic for continuous conduction.
This part belongs to the VS-1N5818 series of axial leaded Schottky rectifiers manufactured by Vishay Semiconductors. The series is designed for general-purpose rectification where fast switching and low conduction losses are prioritized over high reverse voltage capability. It utilizes a metal-silicon junction technology for majority carrier conduction.
Cross-reference with other manufacturers' 1N5818 equivalents to verify pinout compatibility and electrical parameter alignment. Ensure substitute components meet the same DO-204AL package dimensions and thermal characteristics for direct board replacement.
The device supports a peak one-cycle non-repetitive surge current of 225 A under a 5 µs sine pulse condition following any rated load.
The forward voltage drop decreases as temperature increases; it is typically 0.55 V at 25 °C and drops to 0.5 V at 125 °C when conducting 1 A.