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The Diodes Incorporated 1N5818-T is a silicon Schottky barrier rectifier designed for low voltage and high frequency applications. It features an average rectified output current of 1.0 A and a peak repetitive reverse voltage of 30 V. The device exhibits a maximum forward voltage drop of 0.55 V at 1.0 A and 0.875 V at 3.0 A, with a peak reverse leakage current of 1.0 mA at rated DC blocking voltage. It supports a non-repetitive peak forward surge current of 25 A and operates within a temperature range of -65°C to +125°C.
Verify the specific ordering suffix '-T' corresponds to the required tape and reel packaging configuration before procurement. Confirm that the component meets all applicable RoHS compliance requirements for your target market. Ensure the selected manufacturer lot aligns with your quality standards and traceability needs. Cross-reference the datasheet revision date to confirm the electrical parameters match your design specifications.
Select this component when a 30 V reverse voltage rating is required alongside a 1.0 A continuous current capacity. The 1N5818-T is appropriate for designs needing lower forward voltage drops compared to standard PN junction rectifiers. Consider the DO-41 package dimensions for through-hole mounting constraints. Evaluate thermal resistance values if operating near maximum temperature limits.
This part belongs to the 1N5817-1N5819 series of 1.0A Schottky Barrier Rectifiers manufactured by Diodes Incorporated. The series shares identical mechanical data and general features, differentiated primarily by their peak repetitive reverse voltage ratings. The 1N5818 variant specifically targets applications requiring a 30 V blocking voltage level between the 20 V and 40 V options.
Direct substitutes include other manufacturers' 1N5818 equivalents in the DO-41 package. Verify that replacement parts maintain the same 30 V reverse voltage and 1.0 A forward current ratings. Ensure compatibility with existing PCB footprints and soldering profiles.