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The Taiwan Semiconductor 1N5818HR1G is a Schottky barrier rectifier featuring a single silicon die in a DO-204AL (DO-41) axial package. It provides a maximum average forward current of 1 A and a repetitive peak reverse voltage of 30 V. The device supports a surge peak forward current of 30 A and operates within a junction temperature range of -55 °C to +125 °C. The 'H' suffix indicates AEC-Q101 qualification, while the 'R1G' designation corresponds to specific packaging configurations.
Verify that the ordering code explicitly includes the 'H' suffix to confirm AEC-Q101 automotive qualification status. Ensure the suffix matches the required tape and reel or ammo box packing format specified by Taiwan Semiconductor. Confirm RoHS compliance and halogen-free status against project requirements before finalizing procurement orders.
Select this component when a 30 V reverse voltage rating is required alongside a 1 A continuous current capacity. The AEC-Q101 qualification makes it suitable for automotive environments where standard commercial parts may not suffice. Consider the low forward voltage drop characteristics for applications prioritizing thermal management and energy efficiency in compact designs.
This part belongs to the 1N5817–1N5819 series of Schottky barrier rectifiers manufactured by Taiwan Semiconductor. The series utilizes metal-to-silicon technology to achieve fast switching speeds and minimal power loss. The 1N5818 variant specifically targets circuits requiring a 30 V blocking capability, distinguishing it from the 20 V and 40 V options within the same family.
Cross-reference with other manufacturers offering 1N5818 equivalents in the DO-41 package. Verify that substitute components meet the same 30 V reverse voltage and 1 A forward current ratings. Ensure any replacement also satisfies AEC-Q101 requirements if automotive qualification is mandatory for the application.