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The Microchip Technology 1N5819/TR is a Schottky rectifier featuring a 40 V repetitive reverse voltage and a 1 A average forward current. It utilizes a DO-213AB (MELF) surface-mount package with a single diode configuration. Key electrical parameters include a maximum forward voltage of 490 mV at 1 A, a peak forward surge current capability of 25 A, and a reverse leakage current of 50 uA. The device operates within a junction temperature range of -65 °C to +125 °C.
Verify the specific manufacturer designation on the component marking against official Microchip Technology documentation. Confirm that the DO-213AB package matches the required footprint for the design. Ensure compliance with relevant environmental standards by checking the RoHS status indicated in the latest datasheet revision before finalizing procurement.
Select this component when a surface-mount Schottky rectifier is required for low voltage applications. The 40 V rating suits systems where higher voltage margins are unnecessary. The MELF package offers space efficiency compared to axial leads. Verify that the 1 A current rating meets the circuit's continuous load requirements without exceeding thermal limits.
This part belongs to the standard 1N581x series of Schottky rectifiers manufactured by Microchip Technology. It serves as a surface-mount alternative to traditional through-hole axial packages like the DO-41. The TR suffix indicates tape and reel packaging suitable for high-volume automated placement processes in manufacturing environments.
Cross-reference with other manufacturers offering equivalent 40 V 1 A Schottky diodes in the DO-213AB package. Verify pinout compatibility and thermal characteristics before substitution. Ensure any replacement maintains the same switching speed and reverse leakage specifications.