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The 1N5819HW-7-G is a surface-mount Schottky barrier rectifier manufactured by Diodes Incorporated. It provides a maximum average forward rectified current of 1A and a repetitive peak reverse voltage of 40V. The device features a low forward voltage drop, specified at a maximum of 450mV at 1A, ensuring high efficiency in power conversion applications. It operates within a junction temperature range of -65°C to +175°C. The component is housed in an SOD-123 package with two pins and utilizes a guard ring die construction for transient protection.
Verify the specific suffix against official Diodes Incorporated documentation to confirm compliance requirements. Confirm that the requested part matches the exact electrical ratings and package dimensions required for the design. Ensure the supplier provides valid traceability and authenticity guarantees for semiconductor components.
Select this component for designs requiring a compact surface-mount Schottky rectifier with high thermal stability. The SOD-123 package suits space-constrained PCB layouts. Verify that the 40V reverse voltage rating exceeds the circuit's peak inverse voltage. Consider the 1A continuous current limit when sizing heat dissipation paths.
This part belongs to the 1N5819HW series of surface-mount Schottky rectifiers from Diodes Incorporated. It serves as a modern replacement for traditional through-hole equivalents like the DO-41 packaged 1N5819, offering similar electrical performance in a smaller footprint suitable for automated assembly processes.
Direct substitutes include the 1N5819HW-7-F variant from the same manufacturer. Cross-manufacturer equivalents such as Vishay or STMicroelectronics parts in the SOD-123 package may be considered if pinout and electrical specifications are identical.