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The Microchip Technology 1N5819UR-1E3 is a Schottky barrier rectifier featuring a 45 V repetitive peak reverse voltage and a 1 A average forward current. It utilizes the DO-213AB (MELF) surface-mount package. The device exhibits a maximum forward voltage of 490 mV at 1 A and a reverse leakage current of 50 µA at 45 V. It supports a forward surge current of 25 A and operates within a junction temperature range of -65°C to +125°C.
Verify the specific suffix UR-1E3 against official Microchip documentation to confirm compliance with RoHS directives and REACH standards. Ensure the procurement channel provides valid traceability for the JAN or commercial qualification level, as military-grade variants may have different ordering codes. Confirm the package type matches the required DO-213AB footprint for PCB integration.
Select this component when a surface-mount Schottky rectifier with higher voltage tolerance than standard 40 V axial versions is required. The DO-213AB package offers automated assembly compatibility. Compare the 490 mV forward voltage against other SMD options to ensure efficiency targets are met. Verify that the 50 µA leakage specification aligns with the thermal management requirements of the target application environment.
This part belongs to the 1N5819 series of Schottky rectifiers manufactured by Microchip Technology. It serves as a surface-mount alternative to traditional through-hole axial packages like DO-41. The series is designed for general-purpose rectification in low-voltage, high-frequency applications where switching speed and low conduction loss are critical performance factors.
Publicly confirmed substitute part numbers for this specific variant were not identified in the provided source material.