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The Taiwan Semiconductor 1N5820 is a Schottky barrier rectifier featuring a single silicon element in a DO-201AD axial leaded package. It supports an average forward current of 3 A and a repetitive peak reverse voltage of 20 V. The device exhibits a maximum forward voltage of 475 mV at rated current and a reverse leakage current of 500 uA. It withstands a non-repetitive peak forward surge current of 70 A and operates within a junction temperature range of -55 °C to +125 °C.
Verify the specific suffix against official datasheets, as variations like 'A0G' may indicate RoHS compliance or specific packaging formats such as Ammo Pack. Confirm manufacturing status directly with Taiwan Semiconductor, as availability can vary by production lot. Ensure the ordered part matches the required electrical parameters and package outline before integration into designs.
Select this component when low forward voltage drop and high efficiency are critical for power conversion applications. The DO-201AD package provides robust through-hole mounting suitable for general-purpose rectification. Consider the 20 V rating carefully to ensure adequate margin against transient reverse voltages in the target circuit design.
This component belongs to the standard 1N58xx series of Schottky rectifiers widely used in consumer electronics and industrial power supplies. It serves as a direct replacement for legacy silicon rectifiers requiring similar current handling and low forward voltage characteristics. The device represents a mature semiconductor solution for basic DC-DC conversion tasks.
Cross-reference with other manufacturers' 1N5820 equivalents, noting that some variants specify higher forward voltages (e.g., 850 mV) or different surge currents. Verify pinout compatibility and thermal resistance specifications to ensure seamless substitution without redesigning the PCB footprint.