1N5821

Overview

The Taiwan Semiconductor 1N5821 is a single Schottky barrier rectifier designed for high-efficiency power conversion. It features a maximum average forward rectified current of 3 A and a repetitive peak reverse voltage of 30 V housed in the DO-201AD axial through-hole package. Key electrical characteristics include a maximum forward voltage drop of 900 mV at full load and a low reverse leakage current of 500 uA. The device supports a non-repetitive peak forward surge current of 70 A and operates reliably within a junction temperature range from -65 °C to +125 °C.

Feature Summary

• Utilizes silicon Schottky technology to achieve extremely fast switching speeds and minimal conduction losses.
• Incorporates guardring design for enhanced overvoltage protection and robust performance under stress.
• Provides high forward surge capability suitable for handling transient current spikes in power circuits.

Applications

• Low voltage high frequency inverters
• Free wheeling diode applications
• DC-to-DC converters
• Polarity protection circuits

Procurement Notes

Verify the specific manufacturer marking against the official Taiwan Semiconductor datasheet to confirm authenticity, as this component is widely manufactured by multiple vendors with varying specifications. Ensure the ordered part matches the required 30 V rating and DO-201AD package dimensions. Cross-reference the electrical limits, particularly forward voltage and leakage current, with your circuit requirements before finalizing procurement.

Selection Notes

Select the 1N5821 when a 3 A current rating and 30 V blocking voltage are required for efficient rectification. This component is preferred over standard PN junction diodes in applications demanding lower forward voltage drops and faster recovery times. Consider the thermal management capabilities of the DO-201AD package and ensure the operating environment stays within the specified -65 °C to +125 °C temperature range for reliable operation.

Part Context

The 1N5821 belongs to the standard 1N582x series of Schottky barrier rectifiers, which includes variants with different voltage ratings such as the 1N5820 (20 V) and 1N5822 (40 V). These components share identical physical packages and current handling capabilities but differ in their peak reverse voltage specifications. This series is widely recognized for its reliability in general-purpose power supply designs and battery charging applications.

Replacement Considerations

Verified equivalent part numbers include Vishay 1N5821-E3/54 and ON Semiconductor 1N5821RL. When substituting, verify that the alternative maintains the same DO-201AD footprint and meets or exceeds the 3 A current and 30 V voltage ratings.

FAQ

What is the maximum repetitive peak reverse voltage for the 1N5821?

The maximum repetitive peak reverse voltage (Vrrm) for the 1N5821 is 30 V.

Does the 1N5821 feature overvoltage protection mechanisms?

Yes, the device incorporates a guardring structure designed to provide overvoltage protection.

What is the typical application for this Schottky rectifier?

It is typically used in low voltage high frequency inverters, free wheeling applications, DC-to-DC converters, and polarity protection circuits.