1N5822

Overview

The onsemi 1N5822 is a Schottky barrier rectifier utilizing metal-to-silicon power diode technology. It features a DO-201AD axial package with two pins for through-hole installation. Key electrical parameters include a maximum repetitive peak reverse voltage (Vrrm) of 40 V and a maximum continuous forward current (If) of 3 A. The device exhibits a typical peak reverse recovery time (trr) of 1.6 ns and a maximum forward voltage (Vf) of 950 mV at rated current. It supports a peak non-repetitive forward surge current (Ifsm) of 80 A and operates within a junction temperature range from -65°C to 125°C.

Feature Summary

• Employs Schottky barrier principle for majority carrier conduction, resulting in extremely low stored charge and negligible switching losses.
• Features oxide passivation and metal overlap contact geometry for robust performance in high-frequency applications.
• Designed for low forward voltage drop to minimize conduction losses and improve overall system efficiency.

Applications

• Low-voltage, high-frequency inverters
• Free wheeling diodes in DC circuits
• Polarity protection circuits
• Small battery chargers

Procurement Notes

Verify the specific ordering suffix when purchasing, as variations such as RL indicate tape and reel packaging while standard suffixes may denote bag packing. Confirm RoHS compliance status and lead-free availability directly with the manufacturer or authorized distributors, as these attributes depend on the specific production batch and part variant selected.

Selection Notes

Select this component for applications requiring fast switching speeds and low forward voltage drops at moderate current levels. Ensure the circuit's peak reverse voltage does not exceed 40 V and the average forward current remains within the 3 A limit. Consider the DO-201AD package constraints for thermal management and physical space requirements in the final design.

Part Context

This component belongs to the 1N5822 series of axial lead rectifiers manufactured by onsemi. The series utilizes state-of-the-art chrome barrier metal technology. It is functionally comparable to other industry-standard 3A Schottky rectifiers but is distinguished by its specific manufacturing geometry and passivation techniques designed for reliability in power conversion environments.

Replacement Considerations

Cross-reference with Vishay 1N5822-E3/92 or Taiwan Semiconductor 1N5822A0 for equivalent specifications. Verify that substitute parts maintain the same 40 V rating, 3 A current capacity, and DO-201AD package dimensions to ensure mechanical and electrical compatibility without redesigning the PCB footprint.