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The Diotec Semiconductor 1N5822 is a Schottky Barrier Rectifier Diode designed for low voltage and high frequency applications. It features an average forward current rating of 3 A and a peak forward surge current capability of 150 A at 50 Hz or 165 A at 60 Hz. The device has a maximum repetitive reverse voltage of 40 V, with a forward voltage drop of less than 0.95 V at 3 A. Junction capacitance is typically 80 pF at 4 V reverse bias. Thermal resistance from junction to ambient is 25 K/W, while junction to lead is 8 K/W. Operating temperatures range from -50°C to +150°C.
Verify the manufacturer source against official Diotec documentation before procurement. Confirm RoHS compliance and halogen-free status as specified in the datasheet. Ensure the package type matches DO-201AD requirements for your assembly process. Check for any specific automotive qualifications if required by your application standards.
Select this component when low forward voltage and fast recovery are critical for efficiency. The 3 A current rating suits moderate power applications requiring high frequency operation. Consider thermal management given the 25 K/W junction-to-ambient resistance. Verify that the 40 V reverse voltage rating aligns with your circuit's peak inverse voltage requirements.
This part belongs to the 1N582x series of Schottky Barrier Rectifiers produced by Diotec Semiconductor. The series includes variants with different reverse voltage ratings, such as the 1N5820 and 1N5821. These devices are standard commercial/industrial grade components intended for general-purpose rectification in electronic circuits.
Cross-reference with other manufacturers' 1N5822 equivalents like Vishay or STMicroelectronics versions. Ensure pinout compatibility with DO-201AD packages. Verify that alternative parts meet the same 3 A forward current and 40 V reverse voltage specifications.