1N5822/54

Overview

The Vishay General Semiconductor - Diodes Division 1N5822/54 is a Schottky Barrier Rectifier in the 1N5820 thru 1N5822 series. It features a DO-201AD axial package with a maximum repetitive peak reverse voltage of 40 V and a maximum average forward rectified current of 3.0 A. The device exhibits a low forward voltage drop of 0.525 V at 3.0 A and supports a peak forward surge current of 80 A. Operating junction temperature ranges from -65 °C to +125 °C, with a typical thermal resistance of 40 °C/W.

Feature Summary

• Guardring structure provides overvoltage protection
• Extremely fast switching with negligible switching losses
• Very small conduction losses due to low forward voltage drop
• High forward surge capability for robust operation

Applications

• Low voltage high frequency inverters
• Freewheeling applications
• DC-to-DC converters
• Polarity protection circuits

Procurement Notes

Verify the specific ordering suffix /54 against the manufacturer's official documentation to confirm the delivery mode and base quantity. Confirm RoHS compliance status and commercial grade classification. Ensure the component meets JESD 201 class 1A whisker test requirements if applicable to the design specifications.

Selection Notes

Select this component for designs requiring high-frequency operation and low conduction losses. The DO-201AD package suits through-hole mounting. Validate thermal performance using the specified thermal resistance values. Ensure the 40 V reverse voltage rating exceeds the circuit's peak inverse voltage requirements under all operating conditions.

Part Context

This part belongs to the 1N5820 thru 1N5822 series of Schottky Barrier Rectifiers manufactured by Vishay General Semiconductor. The series utilizes silicon technology and offers varying reverse voltage ratings while maintaining consistent current handling capabilities across the lineup.

Replacement Considerations

Direct substitutes include 1N5822-E3/54 from Vishay General Semiconductor - Diodes Division.