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The STMicroelectronics 1N5822 is a silicon Schottky barrier rectifier designed for low voltage and high frequency applications. It features an average forward current of 3 A and a maximum repetitive peak reverse voltage of 40 V. The device utilizes the DO-201AD axial through-hole package, providing isolated mounting capabilities. Key electrical characteristics include a forward voltage drop of 525 mV at 3 A and a maximum reverse leakage current of 2 mA at 40 V. It supports a non-repetitive peak forward surge current of 80 A and operates within a junction temperature range of -65 °C to +150 °C.
Verify component authenticity against official STMicroelectronics documentation. Confirm that the specific batch matches the required RoHS compliance status. Check for any discontinuation notices or end-of-life notifications prior to finalizing procurement plans. Ensure storage conditions align with manufacturer specifications to maintain device integrity.
Select this component for designs requiring high efficiency in low voltage rectification scenarios. The axial DO-201AD package suits applications needing robust mechanical leads. Consider the specified thermal limits when designing heat dissipation strategies. Verify compatibility with existing circuit topologies requiring fast recovery characteristics.
This part belongs to the standard 1N58xx series of Schottky rectifiers manufactured by STMicroelectronics. It serves as a direct replacement for legacy components in power conversion systems. The device is characterized by its reliability in harsh environments and consistent performance across wide temperature ranges.
The maximum operating junction temperature is +150 °C.
Yes, the datasheet specifies avalanche capability for this component.