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The 1N5822-A is a silicon Schottky barrier rectifier manufactured by Diodes Incorporated. It features a single diode configuration in a DO-201AD axial through-hole package. The device supports an average forward current of 3 A and a repetitive peak reverse voltage of 40 V. Key electrical parameters include a maximum forward voltage drop of 950 mV at 3 A, a reverse leakage current of 2 mA at 40 V, and a non-repetitive peak forward surge current of 80 A. It operates within a junction temperature range of -65°C to +125°C.
Verify the specific suffix against official Diodes Incorporated documentation to confirm exact electrical tolerances and packaging variations. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer. Ensure the component meets all required environmental and safety standards for the intended application before procurement.
Select this component for designs requiring efficient rectification in low voltage environments. The 40 V rating suits applications with moderate reverse voltage stress. Verify thermal management requirements as the device dissipates heat proportional to the forward current and voltage drop. Ensure the DO-201AD package fits the PCB layout constraints.
This part belongs to the 1N58 series of Schottky rectifiers from Diodes Incorporated. These devices are designed for general purpose rectification where speed and efficiency are prioritized over high voltage blocking capability. The series offers a balance of current handling and low loss characteristics suitable for consumer and industrial electronics.
Direct replacements include Vishay 1N5822-E3/73 and onsemi 1N5822G. Verify pinout compatibility and ensure substitute parts meet the same 3 A current and 40 V voltage ratings. Check for equivalent forward voltage and thermal performance specifications.