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The Taiwan Semiconductor 1N5822 A0G is a silicon Schottky barrier rectifier designed for low voltage and high frequency applications. It features a single diode configuration in a DO-201AD axial package. Key electrical parameters include a maximum average forward rectified current of 3A, a maximum repetitive peak reverse voltage of 40V, and a maximum non-repetitive peak forward surge current of 70A. The device exhibits a typical forward voltage drop of 525mV at 3A and a maximum reverse leakage current of 2mA at 40V. It operates within a junction temperature range of -55°C to +125°C.
Verify the specific suffix 'A0G' against the official Taiwan Semiconductor datasheet to confirm packaging details and compliance status. Ensure the component matches the standard 1N5822 electrical specifications. Confirm RoHS directive compliance and halogen-free status as required by project specifications before procurement.
Select this component for designs requiring efficient rectification in low voltage, high frequency environments. The 3A current rating and 40V reverse voltage withstand capability suit general purpose power applications. Consider the DO-201AD through-hole package for standard PCB mounting requirements where axial leads are preferred.
This part belongs to the 1N582x series of Schottky barrier rectifiers manufactured by Taiwan Semiconductor. These devices utilize silicon technology to provide superior switching performance compared to standard p-n junction rectifiers. The series is engineered for efficiency in power conversion systems requiring low noise and high reliability.
Direct substitutes include Vishay 1N5822-E3/51 and onsemi 1N5822G. Verify that alternative manufacturers meet the same 3A current, 40V voltage, and DO-201AD package constraints.