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The Taiwan Semiconductor 1N5822 is a silicon Schottky barrier rectifier designed for low voltage and high frequency applications. It features a DO-201AD axial through-hole package with two terminals. Key electrical parameters include a maximum repetitive peak reverse voltage (Vrrm) of 40 V, an average forward rectified current (If) of 3 A, and a maximum non-repetitive peak forward surge current (Ifsm) of 70 A. The device exhibits a maximum forward voltage drop (Vf) of 950 mV at rated current and a maximum reverse leakage current (Ir) of 500 μA. It operates within a junction temperature range of -65°C to 125°C.
Verify the specific manufacturer datasheet for the exact Vf and Ir limits, as values may vary slightly between production batches or specific sub-models. Confirm RoHS compliance status and halogen-free certification requirements against the latest technical documentation before finalizing procurement specifications.
Select this component when a standard axial Schottky rectifier is required for general purpose power supply designs. Ensure the circuit operating voltage remains below the 40 V rating and that thermal management accommodates the 125°C maximum junction temperature limit during continuous operation.
This part belongs to the 1N5822 series of Schottky barrier rectifiers manufactured by Taiwan Semiconductor. It is commonly used in consumer electronics and industrial power supplies where efficient rectification and fast switching are prioritized over high voltage blocking capabilities.
Cross-reference with other manufacturers' 1N5822 equivalents such as those from Diotec or Rectron. Verify pinout compatibility and ensure thermal characteristics match the original design constraints.