1N5822G

1N5822G

$10.97
  • Description:DIODE SCHOTTKY B
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk

SKU:89d0cb3da374 Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE SCHOTTKY B
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Technology:Schottky
  • Voltage - DC Reverse (Vr) (Max):-
  • Current - Average Rectified (Io):-
  • Voltage - Forward (Vf) (Max) @ If:-
  • Speed:-
  • Reverse Recovery Time (trr):-
  • Current - Reverse Leakage @ Vr:-
  • Capacitance @ Vr, F:-
  • Mounting Type:Through Hole
  • Package / Case:Axial
  • Supplier Device Package:B
  • Operating Temperature - Junction:-

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1N5822G

Overview

The Microchip Technology 1N5822G is a silicon Schottky barrier rectifier designed for low voltage, high frequency applications. It features a maximum repetitive reverse voltage of 40 V and an average forward rectified current of 3 A. The device exhibits a typical forward voltage drop of 525 mV at 3 A and a maximum reverse leakage current of 2 mA at 40 V. Packaged in the DO-201AD axial through-hole format, it operates within a junction temperature range of -65°C to 125°C.

Feature Summary

  • Schottky barrier technology provides extremely fast switching speeds with negligible switching losses.
  • Low forward voltage drop minimizes conduction losses for improved efficiency.
  • Robust construction supports high surge current capability and avalanche operation.

Applications

  • Switch mode power supplies (SMPS)
  • High frequency DC to DC converters
  • Free wheeling diodes in inverter circuits
  • Polarity protection systems
  • Small battery chargers

Procurement Notes

Verify the specific manufacturer designation when sourcing, as the 1N5822G part number is primarily associated with onsemi. Confirm that the received component matches the required electrical specifications, particularly the 40 V reverse voltage and 3 A current ratings. Ensure the package type corresponds to the design requirements, typically DO-201AD for this series. Check for RoHS compliance status if environmental regulations apply to the final assembly.

Selection Notes

Select this component for designs requiring efficient rectification in low voltage environments where minimizing power loss is critical. The Schottky technology offers superior performance over standard PN junction diodes due to lower forward voltage and faster recovery times. Ensure the circuit's peak inverse voltage does not exceed the 40 V rating and that thermal management accommodates the specified junction temperature limits during continuous operation.

Part Context

The 1N5822 belongs to a family of axial power Schottky rectifiers widely used in general purpose rectification. While the base 1N5822 specification defines the core electrical parameters, suffixes like 'G' often indicate specific packaging or compliance variations depending on the original equipment manufacturer. This component serves as a standard solution for replacing older rectifier types in legacy and modern power electronics designs.

Replacement Considerations

  • 1N5822-E3/54
  • 1N5822US

1N5822G1N5822G
$10.97
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