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The Taiwan Semiconductor 1N5822H is a Schottky rectifier diode housed in the DO-201AD axial leaded package. It features a maximum repetitive peak reverse voltage (Vrrm) of 40 V and a continuous forward current (If) rating of 3 A. The device exhibits a low maximum forward voltage drop (Vf) of 950 mV at rated current, ensuring high efficiency. It operates within a junction temperature range of -65°C to +175°C and supports a non-repetitive peak forward surge current (Ifsm) of 70 A.
Verify the specific ordering suffix against the manufacturer's official datasheet to confirm packaging type and compliance status. Ensure the selected variant matches the required voltage and current ratings for the target application. Cross-reference part numbers with authorized distributors to confirm authenticity and traceability before procurement.
Select this component when a robust axial leaded Schottky rectifier is required for medium-current applications. The 40 V rating suits low-voltage DC systems, while the 3 A capacity handles moderate loads. Consider the DO-201AD package for through-hole mounting requirements where space constraints are less critical than mechanical durability.
This component belongs to the 1N58xx series of Schottky rectifiers from Taiwan Semiconductor. It serves as a high-efficiency alternative to standard silicon PN-junction diodes in low-voltage, high-frequency applications. The series is designed to minimize power loss and heat generation in compact electronic designs.
Direct substitutes include other manufacturers' 1N5822 equivalents, such as those from Diotec or Vishay, provided they meet the same 40 V/3 A specifications in a DO-201 package. Verify pinout compatibility and thermal characteristics before substitution.