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The GeneSiC Semiconductor 1N5827R is a silicon power Schottky diode in the 1N5826-1N5828R series, rated for a repetitive peak reverse voltage of 30 V and a continuous forward current of 15 A. It utilizes a stud mount configuration within a DO-4 package. The device features a maximum forward voltage of 0.47 V at 25 °C and supports a surge non-repetitive forward current of 500 A. Operating temperatures range from -55 °C to +150 °C, with a thermal resistance junction-to-case of 1.8 °C/W.
Verify the specific polarity suffix when ordering. The 'R' designation indicates reversed polarity where the stud functions as the anode rather than the cathode. Confirm that the required voltage rating matches the 30 V specification for this specific model variant within the series. Ensure mounting hardware compatibility with the DO-4 stud package dimensions.
Select this component for applications requiring a 15 A continuous current capacity with low forward voltage drop. The 30 V reverse voltage rating suits low-voltage systems. Consider the thermal resistance of 1.8 °C/W for heat sink design. Verify if the reversed polarity option is necessary for the specific circuit topology compared to the standard cathode-stud configuration.
This part belongs to the 1N5826 through 1N5828R series of silicon power Schottky rectifiers. These devices share identical current ratings and package types but differ in their voltage ratings, which range from 20 V to 40 V across the series. The series is characterized by metal-to-silicon barrier technology optimized for efficiency in switching applications.
Compatible substitutes include other 1N5827 variants from different manufacturers provided they match the 15 A current, 30 V voltage, and DO-4 stud package specifications. Verify terminal configurations and thermal characteristics before substitution.