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Product Detailed Parameters
- Description：DIODE SCHOTTKY REV 30V 40A DO5
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Technology：Schottky, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max)：30 V
- Current - Average Rectified (Io)：40A
- Voltage - Forward (Vf) (Max) @ If：550 mV @ 40 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：20 mA @ 10 V
- Capacitance @ Vr, F：-
- Mounting Type：Chassis, Stud Mount
- Package / Case：DO-203AB, DO-5, Stud
- Supplier Device Package：DO-5
- Operating Temperature - Junction：-65°C ~ 150°C
- Grade：-
- Qualification：-
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Overview
The GeneSiC Semiconductor 1N5833R is a silicon power Schottky diode housed in a DO-5 stud mount package. It features a repetitive peak reverse voltage of 30 V and an average forward current rating of 40 A per package. The device supports a peak forward surge current of 800 A. Electrical characteristics include a maximum instantaneous forward voltage of 0.70 V at Tj = 25 °C and 1.45 V at Tj = 150 °C, with a maximum instantaneous reverse current of 1 mA at rated DC blocking voltage. The thermal resistance from junction to case is 1.0 °C/W. Operating temperatures range from -55 °C to +150 °C.
Feature Summary
- High surge capability for handling transient current loads
- Low forward voltage drop for reduced conduction losses
- Not ESD sensitive for simplified handling
Applications
- Low voltage high frequency inverters
- Free wheeling applications
- Polarity protection circuits
- Switch mode power supplies
Procurement Notes
Verify the specific electrical ratings against the official datasheet before integration. Confirm that the reverse polarity configuration matches the system design requirements. Ensure mounting torque specifications are strictly followed during installation to maintain thermal performance and mechanical integrity. Validate compatibility with the intended operating temperature range.
Selection Notes
Select this component for applications requiring low forward voltage drop and high surge current handling capabilities. The stud mount package facilitates efficient heat dissipation for high current operations. Consider the reverse polarity variant if the circuit design requires the stud to function as the anode rather than the cathode.
Part Context
This part belongs to the 1N5832 through 1N5834R series of silicon power Schottky rectifiers manufactured by GeneSiC Semiconductor. These devices are designed for use in stud mount configurations within the DO-5 (DO-203AB) package. The series offers various voltage ratings to suit different low voltage power conversion needs.
Replacement Considerations
Compatible substitutes within the same series include the 1N5832R and 1N5834R. Verify that alternative parts match the required voltage and current ratings. Ensure the replacement maintains the same DO-5 package style and terminal configuration.
