1N6073

1N6073

$11.48
  • Description:DIODE STANDARD 50V 850MAXIAL
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk

SKU:35e75e45d7dd Category: Brand:

  
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Product Detailed Parameters

  • Description:DIODE STANDARD 50V 850MAXIAL
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):50 V
  • Current - Average Rectified (Io):850mA
  • Voltage - Forward (Vf) (Max) @ If:2.04 V @ 9.4 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):30 ns
  • Current - Reverse Leakage @ Vr:1 µA @ 50 V
  • Capacitance @ Vr, F:-
  • Mounting Type:Through Hole
  • Package / Case:A, Axial
  • Supplier Device Package:A, Axial
  • Operating Temperature - Junction:-65°C ~ 155°C

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1N6073

Overview

The Microchip Technology 1N6073US is a high-reliability, hermetically sealed silicon rectifier diode designed for demanding power applications. It features a glass-passivated junction and an avalanche-rated construction to withstand transient voltage events. The device utilizes a D-5A (SQ-MELF) surface-mount package, providing robust thermal performance in compact layouts. Key electrical specifications include a maximum repetitive peak reverse voltage of 50 V and an average forward rectified current of 3 A. The component exhibits a fast recovery characteristic with a typical reverse recovery time of 30 ns, ensuring minimal switching losses in high-frequency circuits. Operating temperatures range from -65°C to +155°C.

Feature Summary

  • Hermetic sealing via glass passivation eliminates internal voids, enhancing resistance to moisture ingress and mechanical stress during thermal cycling.
  • Avalanche-rated capability allows the device to safely absorb energy from unclamped inductive switching events without degradation.
  • Fast recovery characteristics minimize reverse recovery charge, reducing electromagnetic interference and switching losses in high-frequency operation.

Applications

  • Freewheeling diodes in DC-DC converter boost circuits
  • Clamping protection for IGBTs and MOSFETs in industrial motor drives
  • Rectification stages in high-efficiency power factor correction (PFC) systems

Procurement Notes

Verify the specific suffix (e.g., US) against the datasheet to confirm hermetic sealing and package type. Confirm RoHS compliance status as standard versions may not meet current environmental directives. Validate that the supplier provides original manufacturer documentation to ensure authenticity and traceability for high-reliability requirements.

Selection Notes

Select this component when system reliability under harsh thermal conditions is critical. The 50V rating suits low-voltage, high-current applications. Ensure the PCB layout accommodates the D-5A footprint. Consider the 3A current limit for continuous load requirements. Verify that the 30ns recovery time aligns with the switching frequency to prevent excessive heat generation.

Part Context

This part belongs to the 1N607xUS series of super-fast recovery rectifiers manufactured by Microchip Technology (formerly Microsemi). The series is engineered for high-reliability environments where standard plastic-packaged diodes might fail due to encapsulation defects. The 'US' designation specifically denotes the hermetic glass-sealed MELF package variant.

FAQ

Is the 1N6073 capable of handling avalanche breakdown?

Yes, the 1N6073 is rated for avalanche operation, allowing it to withstand repetitive avalanche energy without failure.

What is the maximum operating junction temperature?

The maximum operating junction temperature is +155°C.

1N60731N6073
$11.48
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